Photoluminescence of nc-Si:Er thin films obtained by physical and chemical vapo...

• Author(s): Cerqueira, M. F. ; Losurdo, M. ; Stepikhova, M. ; Alpuim, P. ; Andrês, G. ; Kozanecki, A. ; Soares, Manuel Jorge ; Peres, M.
• Date: 2009
• Persistent ID: http://hdl.handle.net/1822/13773
• Origin: RepositóriUM - Universidade do Minho
• Subject(s): Erbium; Nanocrystalline silicon; Photoluminescence
• Document Type: Article
• Language: English

Description

Erbium doped nanocrystalline silicon (nc-Si:Er) thin films were produced by reactive magnetron rf sputtering and by Er ion implantation into chemical vapor deposited Si films. The structure and chemical composition of films obtained by the two approaches were studied by micro-Raman scattering, spectroscopic ellipsometry and Rutherford backscattering techniques. Variation of deposition parameters was used to deposit films with different crystalline fraction and crystallite size. Photoluminescence measurements revealed a correlation between film microstructure and the Er3+ photoluminescence efficiency.