Encontrados 5 documentos, a visualizar página 1 de 1

Ordenado por Data

Crystal size and crystalline volume fraction effects on the Erbium emission of ...

Cerqueira, M. F.; Stepikhova, M.; Kozanecki, A.; Andrês, G.; Alves, E.

Erbium-doped low-dimensional Si films with different microstructures were grown by reactive magnetron sputtering on glass substrates by varying the deposition parameters. Their structure and chemical composition were studied by micro-Raman and Rutherford backscattering spectrometry, respectively. In this contribution the Erbium emission is studied as a function of nanocrystalline fraction and average crystal si...


Structural and photoluminescence studies of erbium implanted nanocrystalline si...

Cerqueira, M. F.; Alpuim, P.; Filonovich, Sergey; Alves, E.; Rolo, Anabela G.; Andrês, G.; Soares, J.; Kozanecki, A.

Hydrogenated amorphous and nanocrystalline silicon thin films deposited by Hot Wire (HW) and Radio-Frequency Plasma-Enhanced (RF) Chemical Vapor Deposition were Er-bium-implanted. Their pre-implantation structural properties and post-implantation optical properties were studied and cor-related. After one-hour annealing at 150ºC in nitrogen atmos-phere only amorphous films showed photoluminescence (PL) activity ...


Photoluminescence of nc-Si:Er thin films obtained by physical and chemical vapo...

Cerqueira, M. F.; Losurdo, M.; Stepikhova, M.; Alpuim, P.; Andrês, G.; Kozanecki, A.; Soares, Manuel Jorge; Peres, M.

Erbium doped nanocrystalline silicon (nc-Si:Er) thin films were produced by reactive magnetron rf sputtering and by Er ion implantation into chemical vapor deposited Si films. The structure and chemical composition of films obtained by the two approaches were studied by micro-Raman scattering, spectroscopic ellipsometry and Rutherford backscattering techniques. Variation of deposition parameters was used to dep...


O movimento pela justiça global na espanha: ativistas, identidade e cartografia...

Tejerina,Benjamín; Albeniz,Iñaki Martínez de; Cavia,Beatriz; Seguell,Andrés G.; Izaola,Amaia

A rápida expansão dos processos de globalização das últimas décadas facilitou tanto a emergência de formas de resistência em relação com as suas conseqüências como o nascimento de processos de mobilização social a favor de uma globalização alternativa. O trabalho que apresentamos sintetiza parte dos resulta dos de uma pesquisa sobre o movimento por uma justiça global na Espanha. Nele abordamos a sua base materi...

Data: 2006   |   Origem: OASIS br

Effect of substrate bias voltage on amorphous Si–C–N films produced by PVD tech...

Cunha, L.; Moura, C.; Leme, J.; Andrês, G.; Pischow, K.

SixCyNz thin films were deposited by reactive magnetron sputtering in glass and steel substrates. The films were grown in a rotation mode over a carbon and a silicon targets in a mixed Ar/N2 atmosphere. The substrates were held at a substrate temperature of 573 K. The argon flow was kept constant (100 sccm) and the nitrogen flow was 20 sccm or 25 sccm, in each one of the two series of produced films, resulting ...


5 Resultados

Texto Pesquisado

Refinar resultados

Autor











Data





Tipo de Documento



Recurso



Assunto















    Financiadores do RCAAP

Fundação para a Ciência e a Tecnologia Universidade do Minho   Governo Português Ministério da Educação e Ciência Programa Operacional da Sociedade do Conhecimento União Europeia