Resistive switching in nanostructured thin films

• Author(s): Silva, H. G. ; Gomes, Henrique L. ; Pogorelov, Y. G. ; Stallinga, Peter ; De Leeuw, Dago M. ; Araújo, J. P. ; Sousa, J. B. ; Meskers, S. C. J. ; Kakazei, G. N. ; Cardoso, S. ; Freitas, P. P.
• Date: 2009
• Persistent ID: http://hdl.handle.net/10400.1/3319
• Origin: Sapientia - Universidade do Algarve
• Document Type: Article
• Language: English

Description

Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.