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Electroforming process in metal-oxide-polymer resistive switching memories
Chen, Q.; Gomes, Henrique L.; Kiazadeh, A.; Rocha, P. R. F.; De Leeuw, Dago M.; Meskers, S. C. J.Electroforming of an Al/Al2O3/polymer/Al esistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current–voltage characteristics and non–volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker...
Planar non-volatile memory based on metal nanoparticles
Kiazadeh, A.; Gomes, Henrique L.; Costa, Ana M. Rosa da; Rocha, P. R. F.; Chen, Q.; Moreira, José A.; De Leeuw, Dago M.; Meskers, S. C. J.Resistive switching properties of silver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated. These devices have on/off resistance ratio as high as 103 , retention times reaching to months and good endurance cycles. Temperature-dependent measurements show that the charge transport is weakly...
Opto-electronic characterization of electron traps upon forming polymer oxide m...
Chen, Q.; Bory, Benjamin F.; Kiazadeh, A.; Rocha, P. R. F.; Gomes, Henrique L.; Verbakel, F.; De Leeuw, Dago M.; Meskers, S. C. J.Metal-insulator-polymer diodes where the insulator is a thin oxide (Al2O3) layer are electroformed by applying a high bias. The initial stage is reversible and involves trapping of electrons near the oxide/polymer interface. The rate of charge trapping is limited by electron transport through the polymer. Detrapping of charge stored can be accomplished by illuminating with light under short-circuit conditions. ...
Trapping of electrons in metal oxide-polymer memory diodes in the initial stage...
Bory, Benjamin F.; Meskers, S. C. J.; Janssen, R. A. J.; Gomes, Henrique L.; De Leeuw, Dago M.Metal oxide-polymer diodes require electroforming before they act as nonvolatile resistive switching memory diodes. Here we investigate the early stages of the electroforming process in Al/Al2O3 /polyspirofluorene /Ba/Al diodes using quasistatic capacitance-voltage measurements. In the initial stage, electrons are injected into the polymer and then deeply trapped near the polyspirofluorene-Al2O3 interface. For ...
Resistive switching in nanostructured thin films
Silva, H. G.; Gomes, Henrique L.; Pogorelov, Y. G.; Stallinga, Peter; De Leeuw, Dago M.; Araújo, J. P.; Sousa, J. B.; Meskers, S. C. J.; Kakazei, G. N.Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switchin...
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