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Resistive switching in nanostructured thin films

Silva, H. G.; Gomes, Henrique L.; Pogorelov, Y. G.; Stallinga, Peter; De Leeuw, Dago M.; Araújo, J. P.; Sousa, J. B.; Meskers, S. C. J.; Kakazei, G. N.

Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switchin...


Study of trap states in zinc oxide (ZnO) thin films for electronic applications

Casteleiro, C.; Gomes, Henrique L.; Stallinga, Peter; Bentes, L.; Ayouchi, R.; Schwarz, R.

The electrical properties of ZnO thin films grown by pulsed laser deposition were studied. Field-effect devices with a mobility reaching 1 cm2/V s show non-linearities both in the current–voltage and in the transfer characteristics which are explained as due to the presence of trap states. These traps cause a reversible threshold voltage shift as revealed by low-frequency capacitance–voltage measurements in met...


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