Dynamic behavior of resistive random access memories (RRAMS) based on plastic s...

• Author(s): Rocha, P. R. F. ; Kiazadeh, A. ; Chen, Q. ; Gomes, Henrique L.
• Date: 2012
• Persistent ID: http://hdl.handle.net/10400.1/3314
• Origin: Sapientia - Universidade do Algarve
• Subject(s): Resistive Random Access Memory (RRAM); Switching; Electrical Bistability; Non-Volatile Memory; Negative Differential Resistance (NDR)
• Document Type: Article
• Language: English

Description

Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit.