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Dynamic behavior of resistive random access memories (RRAMS) based on plastic s...

Rocha, P. R. F.; Kiazadeh, A.; Chen, Q.; Gomes, Henrique L.

Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of ...


Electroforming process in metal-oxide-polymer resistive switching memories

Chen, Q.; Gomes, Henrique L.; Kiazadeh, A.; Rocha, P. R. F.; De Leeuw, Dago M.; Meskers, S. C. J.

Electroforming of an Al/Al2O3/polymer/Al esistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current–voltage characteristics and non–volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker...


New electronic memory device concepts based on metal oxide-polymer nanostructur...

Kiazadeh, A.; Rocha, P. R. F.; Chen, Q.; Gomes, Henrique L.

Nanostructure silver oxide thin films diodes can exhibit resistive switching effects. After an electroforming process the device can be programmed between a low conductance (off-state) and high conductance (on- state) with a voltage pulse and they are already being considered for non-volatile memory applications. However, the origin of programmable resistivity changes in a network of nanostructure silver oxide ...


Planar non-volatile memory based on metal nanoparticles

Kiazadeh, A.; Gomes, Henrique L.; Costa, Ana M. Rosa da; Rocha, P. R. F.; Chen, Q.; Moreira, José A.; De Leeuw, Dago M.; Meskers, S. C. J.

Resistive switching properties of silver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated. These devices have on/off resistance ratio as high as 103 , retention times reaching to months and good endurance cycles. Temperature-dependent measurements show that the charge transport is weakly...


Opto-electronic characterization of electron traps upon forming polymer oxide m...

Chen, Q.; Bory, Benjamin F.; Kiazadeh, A.; Rocha, P. R. F.; Gomes, Henrique L.; Verbakel, F.; De Leeuw, Dago M.; Meskers, S. C. J.

Metal-insulator-polymer diodes where the insulator is a thin oxide (Al2O3) layer are electroformed by applying a high bias. The initial stage is reversible and involves trapping of electrons near the oxide/polymer interface. The rate of charge trapping is limited by electron transport through the polymer. Detrapping of charge stored can be accomplished by illuminating with light under short-circuit conditions. ...


Design and implementation of microstrip filters for a radio over fiber network ...

Rocha, P. R. F.

Dissertação de mest., Engenharia Eléctrica e Telecomunicações, Faculdade de Ciências e Tecnologia, Univ. do Algarve, 2010 ; The need for networks able of integrating services such as voice, video, data and mobility is growing. To satisfy such needs wireless networks with a high data transmission capacity are required. An efficient solution for these broadband wireless networks is to transmit radio signals to t...


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    Financiadores do RCAAP

Fundação para a Ciência e a Tecnologia Universidade do Minho   Governo Português Ministério da Educação e Ciência Programa Operacional da Sociedade do Conhecimento União Europeia