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Dynamic behavior of resistive random access memories (RRAMS) based on plastic s...
Rocha, P. R. F.; Kiazadeh, A.; Chen, Q.; Gomes, Henrique L.Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of ...
Electroforming process in metal-oxide-polymer resistive switching memories
Chen, Q.; Gomes, Henrique L.; Kiazadeh, A.; Rocha, P. R. F.; De Leeuw, Dago M.; Meskers, S. C. J.Electroforming of an Al/Al2O3/polymer/Al esistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current–voltage characteristics and non–volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker...
New electronic memory device concepts based on metal oxide-polymer nanostructur...
Kiazadeh, A.; Rocha, P. R. F.; Chen, Q.; Gomes, Henrique L.Nanostructure silver oxide thin films diodes can exhibit resistive switching effects. After an electroforming process the device can be programmed between a low conductance (off-state) and high conductance (on- state) with a voltage pulse and they are already being considered for non-volatile memory applications. However, the origin of programmable resistivity changes in a network of nanostructure silver oxide ...
Planar non-volatile memory based on metal nanoparticles
Kiazadeh, A.; Gomes, Henrique L.; Costa, Ana M. Rosa da; Rocha, P. R. F.; Chen, Q.; Moreira, José A.; De Leeuw, Dago M.; Meskers, S. C. J.Resistive switching properties of silver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated. These devices have on/off resistance ratio as high as 103 , retention times reaching to months and good endurance cycles. Temperature-dependent measurements show that the charge transport is weakly...
Opto-electronic characterization of electron traps upon forming polymer oxide m...
Chen, Q.; Bory, Benjamin F.; Kiazadeh, A.; Rocha, P. R. F.; Gomes, Henrique L.; Verbakel, F.; De Leeuw, Dago M.; Meskers, S. C. J.Metal-insulator-polymer diodes where the insulator is a thin oxide (Al2O3) layer are electroformed by applying a high bias. The initial stage is reversible and involves trapping of electrons near the oxide/polymer interface. The rate of charge trapping is limited by electron transport through the polymer. Detrapping of charge stored can be accomplished by illuminating with light under short-circuit conditions. ...
Genetic variations of EBV-LMP1 from nasopharyngeal carcinoma biopsies: potentia...
Tang,Y.L.; Lu,J.H.; Cao,L.; Wu,M.H.; Peng,S.P.; Zhou,H.D.; Huang,C.; Yang,Y.X.; Zhou,Y.H.; Chen,Q.; Li,X.L.; Zhou,M.; Li,G.Y.To find Epstein-Barr virus (EBV) strains with genetic variations of EBV latent membrane protein 1 (EBV-LMP1) from nasopharyngeal carcinoma (NPC), the full-length DNA of LMP1 genes from 21 NPC biopsies obtained in Hunan province in southern China was amplified and sequenced. Our sequences were compared to those previously reported by the Clustal V method. Results showed that all 21 sequences displayed two amino ...
Refractory oxides containing aluminium and barium
Davies,T. J.; Biedermann,M.; Chen,Q-G.; Emblem,H. G.; Al-Douri,W. A.Oxides containing aluminium and barium, optionally with chromium, are refractory with several possible industrial uses. A gel precursor of an oxide having the formula BaO.n(Al2xCr2yO3), where 1<n<6.6, (x+y)=1 and 0<y<0.5 was prepared by mixing a solution of a barium salt with a solution of an aluminium salt or a solution of an aluminium salt and a chromium III salt, then forming a gel which was fire...
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