Trapping of electrons in metal oxide-polymer memory diodes in the initial stage...

• Author(s): Bory, Benjamin F. ; Meskers, S. C. J. ; Janssen, R. A. J. ; Gomes, Henrique L. ; De Leeuw, Dago M.
• Date: 2010
• Persistent ID: http://hdl.handle.net/10400.1/3286
• Origin: Sapientia - Universidade do Algarve
• Document Type: Article
• Language: English

Description

Metal oxide-polymer diodes require electroforming before they act as nonvolatile resistive switching memory diodes. Here we investigate the early stages of the electroforming process in Al/Al2O3 /polyspirofluorene /Ba/Al diodes using quasistatic capacitance-voltage measurements. In the initial stage, electrons are injected into the polymer and then deeply trapped near the polyspirofluorene-Al2O3 interface. For bias voltages below 6 V, the number of trapped electrons is found to be CoxideV/q with Coxide as the geometrical capacitance of the oxide layer. This implies a density of traps for the electrons at the polymer-metal oxide interface larger than 31017 m−2.