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Opto-electronic characterization of electron traps upon forming polymer oxide m...
Chen, Q.; Bory, Benjamin F.; Kiazadeh, A.; Rocha, P. R. F.; Gomes, Henrique L.; Verbakel, F.; De Leeuw, Dago M.; Meskers, S. C. J.Metal-insulator-polymer diodes where the insulator is a thin oxide (Al2O3) layer are electroformed by applying a high bias. The initial stage is reversible and involves trapping of electrons near the oxide/polymer interface. The rate of charge trapping is limited by electron transport through the polymer. Detrapping of charge stored can be accomplished by illuminating with light under short-circuit conditions. ...
Trapping of electrons in metal oxide-polymer memory diodes in the initial stage...
Bory, Benjamin F.; Meskers, S. C. J.; Janssen, R. A. J.; Gomes, Henrique L.; De Leeuw, Dago M.Metal oxide-polymer diodes require electroforming before they act as nonvolatile resistive switching memory diodes. Here we investigate the early stages of the electroforming process in Al/Al2O3 /polyspirofluorene /Ba/Al diodes using quasistatic capacitance-voltage measurements. In the initial stage, electrons are injected into the polymer and then deeply trapped near the polyspirofluorene-Al2O3 interface. For ...
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