Autor(es):
Coelho, I. J. S. 
; Figueiredo, J. M. L. ; Ironside, C. N.
Data: 2004
Identificador Persistente: http://hdl.handle.net/10400.1/1184
Origem: Sapientia - Universidade do Algarve
Detalhes do Documento
Modeling of light-sensitive resonant-tunneling-diode devices
Descrição
We present a method to include the effects of light excitation on two different models of resonant-tunneling-diode-based devices. Our approach takes into account both photoconductive and charge accumulation effects responsible for shifting the static I –V curve when the structure is under light excitation. Computational simulations led to good agreement between the model and experimental results
We present a method to include the effects of light excitation on two different models of resonant-tunneling-diode-based devices. Our approach takes into account both photoconductive and charge accumulation effects responsible for shifting the static I –V curve when the structure is under light excitation. Computational simulations led to good agreement between the model and experimental results
Tipo de Documento
Artigo
Idioma Inglês
Idioma Inglês
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