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Self-oscillation and period adding from resonant tunnelling diode–laser diode...
Figueiredo, J. M. L.; Romeira, Bruno; Slight, Thomas James; Wang, Liquan; Wasige, Edward; Ironside, C. N.A hybrid optoelectronic integrated circuit comprising a laser diode driven by a resonant tunnelling diode can output various optical and electrical signal patterns that include self-sustained oscillations, subharmonic and harmonic locking and unlocked signals, with potential applications in optical communication systems.
Giant suppression of shot noise as signature of coherent transport in double ba...
Aleshkin, V. Ya; Reggiani, L.; Alkeev, N. V.; Lyubchenko, V. E.; Ironside, C. N.; Figueiredo, J. M. L.; Stanley, C. R.Shot noise suppression in double barrier resonant tunnelling diodes with a Fano factor well below the value of 0.5 is theoretically predicted. This giant suppression is found to be a signature of the coherent transport regime and can occur near zero temperature as a consequence of the Pauli principle or above about 77 K as a consequence of long range Coulomb interaction. These predictions are validated by exper...
Modeling of light-sensitive resonant-tunneling-diode devices
Coelho, I. J. S.; Figueiredo, J. M. L.; Ironside, C. N.We present a method to include the effects of light excitation on two different models of resonant-tunneling-diode-based devices. Our approach takes into account both photoconductive and charge accumulation effects responsible for shifting the static I –V curve when the structure is under light excitation. Computational simulations led to good agreement between the model and experimental results
Reply to comment on 'Giant suppression of shot-noise in double barrier resonant...
Aleshkin, V. Ya; Reggiani, L.; Alkeev, N. V.; Lyubchenko, V. E.; Ironside, C. N.; Figueiredo, J. M. L.; Stanley, C. R.Shot noise suppression below 1/2 of the full Poisson value in double barrier resonant diodes is confirmed to be a signature of coherent rather than sequential tunnelling transport. We reply to the arguments of the previous comment which dispute the above claim. We anticipate the development of a rigorous theory that improves previous approaches without contradicting the essential findings we recently reported (...
Coherent approach to transport and noise in double-barrier resonant diodes
Aleshkin, V. Ya; Reggiani, L.; Alkeev, N. V.; Lyubchenko, V. E.; Ironside, C. N.; Figueiredo, J. M. L.; Stanley, C. R.We implement a quantum approach which includes long range Coulomb interaction and investigate current voltage characteristics and shot noise in double-barrier resonant diodes. The theory applies to the region of low applied voltages up to the region of the current peak and considers the wide temperature range from zero to room temperature. The shape of the current voltage characteristic is well reproduced and w...
Giant suppression of shot noise in double barrier resonant diode: a signature o...
Aleshkin, V. Ya; Reggiani, L.; Alkeev, N. V.; Lyubchenko, V. E.; Ironside, C. N.; Figueiredo, J. M. L.; Stanley, C. R.Shot noise suppression in double barrier resonant tunnelling diodes with a Fano factor well below the value of 0.5 is theoretically predicted. This giant suppression is found to be a signature of coherent transport regime and can occur at zero temperature as a consequence of the Pauli principle or at sufficiently high temperatures above 77 K as a consequence of a long-range Coulomb interaction. These prediction...
Superhigh-frequency characteristics of optical modulators on the basis of InGaA...
Aleshkin, V. Ya; Lyubchenko, V. E.; Figueiredo, J. M. L.; Ironside, C. N.; Stanley, C. R.The impedance of InGaAlAs resonance-tunnel heterostructures used for modulation of optical radiation is experimentally studied in the frequency range from 45 to 18 MHz. The dependence of their equivalent circuit on the bias voltage is determined. The spectrum of the harmonics of the current in the resistive frequency multiplication in such structures is calculated. The results confirm that these structures are ...
Superhigh-frequency characteristics of optical modulators on the basis of InGaA...
Alkeev, N. V.; Lyubchenko, V. E.; Ironside, C. N.; Figueiredo, J. M. L.; Stanley, C. R.High speed Optoelectronic modulation using the resonant tunnelling characteristics by interaction of a resonant tunnelling diode (RTD) in the middle of an unipolar ridge optical waveguide based on the GaAs/AlGaAs system is investigated. This interaction of an RTD within an optical waveguide introduces high non-linearities into the electrical characteristics of the waveguide by inducing large electric field chan...
Optical modulation in a resonant tunneling relaxation oscillator
Figueiredo, J. M. L.; Stanley, C. R.; Boyd, A. R.; Ironside, C. N.; McMeekin, S. G.; Leite, A. M. P.We report high-speed optical modulation in a resonant tunneling relaxation oscillator consisting of a resonant tunneling diode (RTD) integrated with a unipolar optical waveguide and incorporated in a package with a coplanar waveguide transmission line. When appropriately biased, the RTD can provide wide-bandwidth electrical gain. For wavelengths near the material band edge, small changes of the applied voltage ...
Optical modulation at around 1550 nm in an InGaAlAs optical waveguide containin...
Figueiredo, J. M. L.; Boyd, A. R.; Stanley, C. R.; Ironside, C. N.; McMeekin, S. G.; Leite, A. M. P.We report electroabsorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing an InGaAs/AlAs double-barrier resonant tunneling diode ~RTD!. The RTD peak-to-valley transition increases the electric field across the waveguide, which shifts the core material absorption band edge to longer wavelengths via the Franz–Keldysh effect, thus changing the light-guiding characteristic...
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