Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers

• Autor(es): Seitz, R. ; Gaspar, C. ; Monteiro, T. ; Pereira, E. ; Poisson, M.A. ; Beaumont, B.
• Data: 1999
• Identificador Persistente: http://hdl.handle.net/10773/7086
• Origem: RIA - Repositório Institucional da Universidade de Aveiro
• Assunto(s): Electron emission; Electron energy levels; Gas lasers; Metallorganic chemical vapor deposition; Monochromators; Photoluminescence; Photomultipliers; Sapphire; Substrates
• Tipo de Documento: Documento de conferência
• Idioma: Inglês

Descrição

In this study, an attempt was made to analyze the luminescence between 3.36 eV and 3.41 eV of nid hexagonal GaN samples grown on sapphire. Sample dependent emission lines with no donor-accetor pair (DAP) behavior were found. Based on the data, different kinds of recombination processes in the same spectral region were identified.