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Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
Vacas, J.; Lahrèche, H.; Monteiro, T.; Caspar, C.; Pereira, E.; Brylinski, C.; Di Forte-Poisson, M.A.A comparative study between GaN/SiC heterojunction and 6H-SiC homojunction diodes has been performed to understand the physical properties of n-p GaN/SiC heterojunction interface. The 6H-SiC homojunction diodes presented typical I-V characteristics with satisfactory breakdown voltage (≅-800 V), however, the GaN/SiC heterojunction diodes showed an abnormal low forward turn-on voltage (≅1.8 V). The presence of a ...
Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers
Seitz, R.; Gaspar, C.; Monteiro, T.; Pereira, E.; Poisson, M.A.; Beaumont, B.In this study, an attempt was made to analyze the luminescence between 3.36 eV and 3.41 eV of nid hexagonal GaN samples grown on sapphire. Sample dependent emission lines with no donor-accetor pair (DAP) behavior were found. Based on the data, different kinds of recombination processes in the same spectral region were identified.
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