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Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers
Seitz, R.; Gaspar, C.; Monteiro, T.; Pereira, E.; Poisson, M.A.; Beaumont, B.In this study, an attempt was made to analyze the luminescence between 3.36 eV and 3.41 eV of nid hexagonal GaN samples grown on sapphire. Sample dependent emission lines with no donor-accetor pair (DAP) behavior were found. Based on the data, different kinds of recombination processes in the same spectral region were identified.
Temperature behaviour of the yellow emission in GaN
Seitz, R.; Gaspar, C.; Monteiro, T.; Pereira, E.; Leroux, M.; Beaumont, B.; Gibart, P.Even in good quality undoped GaN samples, as assessed by the intense excitonic emission, the yellow band is present. This band has been attributed either to a shallow donor to deep double donor pair recombination [1], to a deep donor to a shallow acceptor [2] or to a shallow donor and a deep state [3]. However, its origin is not yet clear. We present data on time resolved spectroscopy compared with steady state...
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