Low-temperature fabrication of layered self organized ge clusters by RF-sputtering

• Author(s): Pinto, S. R. C. ; Rolo, Anabela G. ; Buljan, M. ; Chahboun, A. ; Bernstorff, S. ; Barradas, N. P. ; Alves, E. ; Kashtiban, R. J. ; Bangert, U. ; Gomes, M. J. M.
• Date: 2011
• Persistent ID: http://hdl.handle.net/1822/15689
• Origin: RepositóriUM - Universidade do Minho
• Subject(s): GISAXS grazing incidence small angle X-ray scattering; HRTEM high resolution transmission electron microscopy; NCs: nanocrystals; Ge clusters; RBS: Rutherford backscattering spectrometry; XPS: X-ray photoelectron spectroscopy; Raman spectroscopy; Magnetron sputtering; (Ge + SiO2) / SiO2 multilayers; Low temperature
• Document Type: Article
• Language: English

Description

In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.