Spectroscopic ellipsometry study of the layer structure and impurity content in...

• Author(s): Losurdo, M. ; Cerqueira, M. F. ; Stepikhova, M. ; Alves, E. ; Giangregorio, M. M. ; Pinto, P. ; Ferreira, J. A.
• Date: 2001
• Persistent ID: http://hdl.handle.net/1822/13990
• Origin: RepositóriUM - Universidade do Minho
• Subject(s): Spectroscopic ellipsometry; Nanocrystalline silicon; Erbium
• Document Type: Article
• Language: English

Description

Er doped nc-Si thin films have been investigated by spectroscopic ellipsometry (SE). The optical response of Er ions in a nc-Si/SiO matrix has been determined by SE, and it has been used to detect Er contents as low as 0.2 at%. The complex layered nanostructure of nc-Si:Er:O has been resolved and it has been found that it is strongly influenced by the Er-doping and the oxygen in-depth distribution profile. SE results are discussed in comparison with data obtained by the standard methods of the X-ray diffraction, Rutherford backscattering and Raman spectroscopy.