Modeling Buffer Layer IGBTs with an Efficient Parameter Extraction Method

• Autor(es): Rui Filipe Marques Chibante ; Armando Luís Sousa Araújo ; Adriano da Silva Carvalho
• Data: 2005
• Identificador Persistente: http://hdl.handle.net/10216/275
• Origem: Repositório Aberto da Universidade do Porto
• Assunto(s): Ciências tecnológicas; Engenharia; Engenharia electrotécnica
• Tipo de Documento: Documento de conferência
• Idioma: Inglês

Descrição

This paper presents a Finite Element, physics-based, punch-through, IGBT model, its SPICE implementation and a parameter extraction procedure. Developed model is based on solving Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs, from which charge carrier distribution is obtained. SPICE Model Implementation uses an electrical analogy for the resulting system of ODEs. Other parts of the devices are modelled using conventional methods. Parameter extraction uses an optimisation algorithm, in order to get an efficient extraction of a large number of parameters needed for physics-based IGBT models. Model is validated comparing experimental and simulated results.