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A FEM punch-through IGBT model using an efficient parameter extraction method

Modeling Buffer Layer IGBTs with an Efficient Parameter Extraction Method

This paper presents a Finite Element, physics-based, punch-through, IGBT model, its SPICE implementation and a parameter extraction procedure. Developed model is based on solving Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs, from which charge carrier distribution is obtained. SPICE Model Implementation uses an electrical analogy for the resulting system of...

A simple and efficient parameter extraction procedure for physics based IGBT mo...

Extraction of parameters for models of power semiconductors is a need for researchers working with development of power circuits. One of the drawbacks of physics based models is how to extract the numerous parameters to describe the model. Different approaches have been taken, most of them cumbersome to be solved. This paper presents a simple and accurate method of parameter extraction for physics based IGBT mo...

A new physics based SPICE sub-circuit model for insulated gate bipolar transist...

The paper describes SPICE simulator implementation of a new, physics based, Finite Element Method (FEM) model for semiconductor simulation. The method is based on unidimensional approach that associates each zone of the semiconductor to a sub-circuit capable of implementation, in any general circuit simulator (such as SPICE), in a modular mode. After identification of these zones they are just modelled using ...

A new physics based SPICE model for NPT IGBT

A physics based, Non-Punch-Through, Insulated Gate Bipolar Transistor (NPT-IGBT) model is presented, as well as its porting into available circuit simulator SPICE. The developed model results in a system of ODEs, from which time/space hole/electron distribution is obtained, and is based on solution of ambipolar diffusion equation (ADE) trough a variational formulation, with posterior implementation using one-di...