Encontrados 7 documentos, a visualizar página 1 de 1

A FEM punch-through IGBT model using an efficient parameter extraction method

Modeling Buffer Layer IGBTs with an Efficient Parameter Extraction Method

This paper presents a Finite Element, physics-based, punch-through, IGBT model, its SPICE implementation and a parameter extraction procedure. Developed model is based on solving Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs, from which charge carrier distribution is obtained. SPICE Model Implementation uses an electrical analogy for the resulting system of...

A variational ADE (ambipolar diffusion equation) formulation and its finite ele...

This paper presents a variational formulation of the Ambipolar Diffusion Equation (ADE) and a finite element (FE) method approach to its solution. The method allows solutions for ADE through equivalent electrical networks. So it will be simple to teach the dynamics associated with low doped zones, presented in any bipolar semiconductor, such as power diodes, thyristors, bjts and igbts, as well as, its static an...

A simple and efficient parameter extraction procedure for physics based IGBT mo...

Extraction of parameters for models of power semiconductors is a need for researchers working with development of power circuits. One of the drawbacks of physics based models is how to extract the numerous parameters to describe the model. Different approaches have been taken, most of them cumbersome to be solved. This paper presents a simple and accurate method of parameter extraction for physics based IGBT mo...

A new physics based SPICE sub-circuit model for insulated gate bipolar transist...

The paper describes SPICE simulator implementation of a new, physics based, Finite Element Method (FEM) model for semiconductor simulation. The method is based on unidimensional approach that associates each zone of the semiconductor to a sub-circuit capable of implementation, in any general circuit simulator (such as SPICE), in a modular mode. After identification of these zones they are just modelled using ...

A new physics based SPICE model for NPT IGBT

A physics based, Non-Punch-Through, Insulated Gate Bipolar Transistor (NPT-IGBT) model is presented, as well as its porting into available circuit simulator SPICE. The developed model results in a system of ODEs, from which time/space hole/electron distribution is obtained, and is based on solution of ambipolar diffusion equation (ADE) trough a variational formulation, with posterior implementation using one-di...

Current control in the grid connection of the double-output induction generator...

The output power of present wind turbines is continuously increasing. At high power levels, to limit mechanical stresses and power surges in the grid it is necessary to use speed control systems. The double-output induction generator (DOIG) system is an excellent solution to adjust the speed over a wide range. At present the two converters associated with the DOIG use high power IGBTs with medium switching freq...