Description
Ti1-xSixNy films were synthesised by RF reactive sputtering from Ti and Si elemental targets, in an Ar/N2 gas mixture. XRD results revealed the development of a two-phase system, composed of a nanocrystalline f.c.c. TiN (phase 1: B1 NaCl type) and a second one (phase 2), where Si atoms replaced some of the Ti ones, inducing a structure that we may call a solid solution. An amorphous phase, supposed to be of silicon nitride, within grain boundaries seems to be also present, especially for high Si contents. TEM experiments confirmed the f.c.c.-type structure for phase 2, which is the only phase that develops without ion bombardment. The higher lattice parameter of phase 1 (~0.429 nm compared to 0.424 nm for bulk TiN) may be explained by the residual stress effect on peak position. The Ti replacement by Si would explain the low value of the lattice parameter for phase 2 (~0.418 nm). All samples showed good results for hardness (Hv>=30 GPa), and Ti0.85Si0.15N1.03 at a deposition temperature of 300°C showed a value of approximately 47 Gpa, which is approximately double that of pure TiN. For higher deposition temperatures, an increase in hardness is observed, as demonstrated by this same sample, which at 400°C reveals a value of approximately 54 GPa. Similar behaviour was observed in adhesion, where this same sample revealed a critical load for adhesive failure of approximately 90 N. In terms of oxidation resistance, a significant increase has also been observed in comparison with TiN. At 600°C, the oxidation resistance of Ti0.70Si0.30N1.10 is already 100 times higher than that of TiN. For higher temperatures this behaviour tends to be even better when compared with other nitrides. http://www.sciencedirect.com/science/article/B6TVV-41ST0WS-1P/1/67eb0cbade34941d6943bcdb43320cb3
; Rebouta, L. 
