Direct current magnetron sputtering was used to produce AlNxOy thin films, using an aluminum target, argon and a mixture of N2+O2 (17:3) as reactive gases. The partial pressure of the reactive gas mixture was increased, maintaining the discharge current constant. Within the two identified regimes of the target (metallic and compound), four different tendencies for the deposition rate were found and a morphologi...
Three sets of nanocomposite films consisting of different atomic concentrations of Ag dispersed in a TiO2 dielectric matrix were deposited by DC reactive magnetron sputtering, and subjected to several thermal annealing experiments in vacuum, for temperatures ranging from 200 to 600 ºC. The main goal of the present study is to analyse the optical properties of the as-deposited and annealed films in order to clar...
Ti–Si–C thin films were deposited onto silicon, stainless steel and high-speed steel substrates by magnetron sputtering, using different chamber configurations. The composition of the produced films was obtained by Electron Probe Micro-Analysis (EPMA) and the structure by X-ray diffraction (XRD). The hardness and residual stresses were obtained by depth-sensing indentation and substrate deflection measurements ...
Ti–Si–Al–N films were prepared by rf reactive magnetron sputtering, in static and rotation modes, using a wide range of different deposition conditions, which created conditions to obtain Ti–Al–Si–N coatings with different structural arrangements. Films prepared below a critical nitrogen flow, under conditions out of thermodynamic equilibrium, revealed a preferential growth of an fcc (Ti,Al,Si)Nx compound with ...
Article in Press ; MoNxOy films were deposited on steel substrates by dc reactive magnetron sputtering. The depositions were carried out from a pure molybdenum target, varying the flow rate of reactive gases. X-ray diffraction (XRD) results revealed the occurrence of cubic MoNx and hexagonal (d-MoN) phases for the films with high nitrogen flow rates. The increase of oxygen content induces the decrease of the g...
A d.c. reactive magnetron sputtering technique was used to deposit (Ti,Si,Al)N coatings onto WC–Co cutting tools. The microstructure of the coatings was analysed using X-ray diffraction (XRD) and highresolution transmission electron microscopy (HRTEM) measurement. Before the cutting experiments, the XRD results revealed a structure indexed to an fcc TiN. The results obtained by the XRD tests, with detector vari...
The main purpose of this work consists in the preparation of titanium oxycarbide, TiCxOy, thin films, in which the presence of oxygen changed the film properties between those of titanium carbide and those of titanium oxide. Varying the oxide/carbide ratio allowed to tune the structure of the films between titanium oxide and carbide and consequently electronic, mechanical and optical properties of the films. Th...
The main purpose of this work consists in the preparation of single layered titanium oxycarbide, TiCxOy, thin films. The obtained results show that the evolution of the different elements concentration with the oxygen flow can be divided into 3 different regimes -- i) carbide, zone I, ii) transition, zone T, and iii) an oxide one, zone II. Structure characterization results showed that the films crystallize in ...
Single-layered zirconium oxynitride (ZrNxOy) thin films have been deposited on steel substrates, at a constant temperature of 300 °C, by radiofrequency (rf) reactive magnetron sputtering of a pure Zr target in an argon-oxygen-nitrogen atmosphere. The variation of the flow rate of the reactive gases enabled changes in the composition and structure of the films. X-ray diffraction (XRD) and glancing incidence X-ra...
The main purpose of this work consists on the preparation of single layered molybdenum oxynitride, MoNxOy. The films were deposited on steel substrates by dc reactive magnetron sputtering. The depositions were carried out from a pure Mo target varying the flow rate of reactive gases, which allowed tune the crystallographic structure between insulating oxides and metallic nitrides and consequently electronic, me...
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