Effect of the matrix on the 1.5 μm photoluminescence of Er-doped silicon quantu...

• Autor(es): Cerqueira, M.F. ; Stepikhova, M. ; Losurdo, M. ; Monteiro, T. ; Soares, M.J. ; Peres, M. ; Neves, A. ; Alves, E.
• Data: 2006
• Identificador Persistente: http://hdl.handle.net/10773/6636
• Origem: RIA - Repositório Institucional da Universidade de Aveiro
• Assunto(s): Ellipsometry; Photoluminescence; Silicon QD; Structure
• Tipo de Documento: Artigo
• Idioma: Inglês

Descrição

Erbium doped nanocrystalline silicon thin films were produced by reactive magnetron r.f sputtering. Their structural and chemical properties were studied by micro-Raman, spectroscopic ellipsometry and Rutherford backscattering spectroscopy. Films with different crystalline fraction and crystallite size were deposited by changing the deposition parameters. The impact of the composition and structure of Erbium ions environment on the 1.5 μm photoluminescence is discussed. FCT - POCTI/CTM/39395/2001 INTAS - 03/51-6486