Distribution of 1.68 eV emission from diamond films

• Autor(es): Correia, M.R. ; Monteiro, T. ; Pereira, E. ; Costa, L.C.
• Data: 1998
• Identificador Persistente: http://hdl.handle.net/10773/6485
• Origem: RIA - Repositório Institucional da Universidade de Aveiro
• Assunto(s): Diamond; Elemental semiconductors; Semiconductor thin films; CVD coatings; Photoluminescence; Raman spectra; Spectral line intensity; Spectral line breadth
• Tipo de Documento: Artigo
• Idioma: Inglês

Descrição

Free-standing polycrystalline chemical vapor deposition diamond films grown on a silicon wafer, with electrical behavior similar to values currently mentioned in the literature, present microheterogeneity. A detailed analysis by micro Raman shows how the diamond and nondiamond phases are distributed within the film and also the distribution of the silicon related luminescence. This luminescence is discussed in terms of two emitting centers close in energy. Absolute intensity of the diamond peak is not correlated with the good quality of the film as assessed by the Raman linewidth and ratio of this line to the nondiamond Raman lines