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Impact of composition and morphology on the optical properties of Si-NC/P3HT th...
Rodrigues, F. D.; Cunha, Mara; Hilliou, L.; Rino, L.; Correia, M. R.; Busani, T.; Bernardo, Gabriel; Wiggers, H.; Filonovich, Sergey; Pereira, R. N.Blends of Si nanocrystals (Si-NCs) and organic semiconductors are promising materials for new optical and electronic devices processed from solutions. Here, we study how the optical properties of composite films containing Si-NCs and the organic semiconductor poly(3-hexylthiophene) (P3HT) are influenced by the composition and morphology resulting from different solution-processing parameters and different solve...
Structural and optical properties of Zn0.9 Mn0.1 O/ZnO core-shell nanowires des...
Kaydashev, V.E.; Kaidashev, E.M.; Peres, M.; Monteiro, T.; Correia, M.R.; Sobolev, N.A.; Alves, L.C.; Franco, N.; Alves, E.Core-shell ZnO/ZnMnO nanowires on a-Al2O3 and GaN (buffer layer)/Si (111) substrates were fabricated by pulsed laser deposition using a Au catalyst. Two ZnO targets with a Mn content of 10% were sintered at 1150 and 550 °C in order to achieve the domination in them of paramagnetic MnO2 and ferromagnetic Mn2O3 phases, respectively. Cluster mechanism of laser ablation as a source of possible incorporation of seco...
Efeito da cobertura morta de milheto (Pennisetum americanum) sobre a eficácia d...
Godoy,M.C.; Meschede,D.K.; Carbonari,C.A.; Correia,M.R.; Velini,E.D.Com o objetivo de avaliar a eficácia do metribuzin (480 g i.a. ha-1) associado à palha de milheto no controle de Ipomoea grandifolia e Sida rhombifolia, foram realizados dois experimentos em casa de vegetação. No primeiro, os tratamentos constituíram-se de diferentes posicionamentos do herbicida, aplicado sobre e sob a palha em diferentes condições de umidade. No segundo, foram estudados diferentes períodos de ...
Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O sa...
Monteiro, T.; Soares, J.; Correia, M.R.; Alves, E.Er-related luminescence near 1.54 mm ~;805 meV! is observed under below band gap excitation at 4.2 K in GaN:Er and GaN:Er,O implanted samples. The spectrum of the recovered damage samples is a multiline structure. So far, these lines are the sharpest ones reported for GaN. Well-resolved green and red luminescences are observed in implanted samples. The dependence of luminescence on the excitation energy as well...
Compositional dependence of the strain-free optical band gap in InxGa1 - xN layers
Pereira, S.; Correia, M.R.; Monteiro, T.; Pereira, E.; Alves, E.; Sequeira, A.D.; Franco, N.The effect of strain on the compositional and optical properties of a set of epitaxial single layers of InxGa12xN was studied. Indium content was measured free from the effects of strain by Rutherford backscattering spectrometry. Accurate knowledge of the In mole fraction, combined with x-ray diffraction measurements, allows perpendicular strain (e zz) to be evaluated. Optical band gaps were determined by absor...
Distribution of 1.68 eV emission from diamond films
Correia, M.R.; Monteiro, T.; Pereira, E.; Costa, L.C.Free-standing polycrystalline chemical vapor deposition diamond films grown on a silicon wafer, with electrical behavior similar to values currently mentioned in the literature, present microheterogeneity. A detailed analysis by micro Raman shows how the diamond and nondiamond phases are distributed within the film and also the distribution of the silicon related luminescence. This luminescence is discussed in ...
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