Study on excimer laser irradiation for controlled dehydrogenation and crystalli...

• Author(s): Gontad, F. ; Filonovich, Sergey ; Cerqueira, M. F. ; Alpuim, P. ; Chiussi, Stefano
• Date: 2013
• Persistent ID: http://hdl.handle.net/1822/27346
• Origin: RepositóriUM - Universidade do Minho
• Subject(s): Excimer laser annealing; Dehydrogenation; Hydrogenated amorphous silicon; Boron doped nanocrystalline silicon
• Document Type: Article
• Language: English

Description

We report on the excimer laser annealing (ELA) induced temperature gradients, allowing controlled crystal-lization and dehydrogenation of boron-doped a-Si:H/nc-Si:H multilayers. Depth of the dehydrogenation and crystallization process has been studied numerically and experimentally, showing that temperatures below the monohydride decomposition can be used and that significant changes of the doping profile can be avoided. Calculation of temperature profiles has been achieved through numerical modeling of the heat conduction differential equation. Increase in the amount of nano-crystals, but not in their size, has been demonstrated by Raman spectroscopy. Effective dehydrogenation and shape of the boron profile have been studied by time of flight secondary ion mass spectroscopy. The relatively low temperature threshold for dehydrogenation, below the monohydride decomposition temperature, has been attributed to both, the large hydrogen content of the original films and the partial crystallization during the ELA process. The results of this study show that UV-laser irradiation is an effective tool to improve crystallinity and dopant activation in p+-nc-Si:H films without damaging the substrate.