The effect of argon plasma treatment on the permeation barrier properties of si...

• Autor(es): Majee, Subimal ; Cerqueira, M. F. ; Tondelier, D. ; Geffroy, B. ; Bonnassieux, Y. ; Alpuim, P. ; Bourée, J. E.
• Data: 2013
• Identificador Persistente: http://hdl.handle.net/1822/27344
• Origem: RepositóriUM - Universidade do Minho
• Assunto(s): Silicon nitride; Ar plasma treatment; Permeation barrier; HW-CVD
• Tipo de Documento: Artigo
• Idioma: Inglês

Descrição

In this work we produce and study silicon nitride (SiNx) thin films deposited by Hot Wire Chemical Vapor Depo- sition (HW-CVD) to be used as encapsulation barriers for flexible organic photovoltaic cells fabricated on poly- ethylene terephthalate (PET) substrates in order to increase their shelf lifetime. We report on the results of SiNx double-layers and on the equivalent double-layer stack where an Ar-plasma surface treatment was performed on the first SiNx layer. The Ar-plasma treatment may under certain conditions influences the structure of the interface between the two subsequent layers and thus the barrier properties of the whole system. We focus our attention on the effect of plasma treatment time on the final barrier properties. We assess the encapsulation barrier properties of these layers, using the calcium degradation test where changes in the electrical conductance of encapsulated Ca sensors are monitored with time. The water vapor transmission rate (WVTR) is found to be ~3 × 10−3 g/m2·day for stacked SiNx double-layer with 8 min Ar plasma surface treatment.