Encontrados 2 documentos, a visualizar página 1 de 1
The effect of argon plasma treatment on the permeation barrier properties of si...
Majee, Subimal; Cerqueira, M. F.; Tondelier, D.; Geffroy, B.; Bonnassieux, Y.; Alpuim, P.; Bourée, J. E.In this work we produce and study silicon nitride (SiNx) thin films deposited by Hot Wire Chemical Vapor Depo- sition (HW-CVD) to be used as encapsulation barriers for flexible organic photovoltaic cells fabricated on poly- ethylene terephthalate (PET) substrates in order to increase their shelf lifetime. We report on the results of SiNx double-layers and on the equivalent double-layer stack where an Ar-plasma ...
Deposition of silicon nitride thin films by hot-wire CVD at 100ºC and 250ºC
Alpuim, P.; Gonçalves, L. M.; Marins, Emílio Sérgio; Viseu, T. M. R.; Ferdov, S.; Bourée, J. E.Silicon nitride thin films for use as passivation layers in solar cells and organic electronics or as gate dielectrics in thin-film transistors were deposited by the Hot-wire chemical vapor deposition technique at a high deposition rate (1-3 Ǻ/s) and at low substrate temperature. Films were deposited using NH3/SiH4 flow rate ratios between 1 and 70 and substrate temperatures of 100º C and 250ºC. For NH3/SiH4 ra...
| Financiadores do RCAAP | |||||||
|
|
|
|
|
|
||