High-resistivity polycrystalline silicon as RF substrate in wafer-level packaging

• Author(s): Polyakov, A. ; Sinaga, S. M. ; Mendes, P. M. ; Correia, J. H. ; Bartek, M. ; Burghartz, J. N.
• Date: 2005
• Persistent ID: http://hdl.handle.net/1822/1521
• Origin: RepositóriUM - Universidade do Minho
• Subject(s): Wafer level packaging; Integrated antenna
• Document Type: Article
• Language: English

Description

High-resistivity polycrystalline silicon (HRPS) is presented as a novel low-cost and low-loss substrate for radio-frequency (RF) passive components in wafer-level packaging and integrated passive networks. A record quality factor (Q¼11; 1 GHz; 34 nH) and very low loss (0.65 dB=cm; 17 GHz) are demonstrated for inductors and coplanar waveguides, respectively, on HRPS.