Effect of grain size and hydrogen passivation on the electrical properties of n...

• Autor(es): Cerqueira, M. F. ; Semikina, T. V. ; Baidus, N. V. ; Alves, E.
• Data: 2010
• Identificador Persistente: http://hdl.handle.net/1822/13751
• Origem: RepositóriUM - Universidade do Minho
• Assunto(s): Amorphous silicon; Nanocrystal; Raman spectroscopy; Electrical properties
• Tipo de Documento: Artigo
• Idioma: Inglês

Descrição

The properties of mixed-phase (nanocrystalline/amorphous) silicon layers produced by reactive RF-sputtering are described. The chemical composition and nanostructure [i.e. nanocrystal (NC) size and volume fraction] of the films were studied by Rutherford backscattering spectroscopy (RBS) and micro-Raman spectroscopy, respectively. Samples with different fractions of the nanocrystalline phase and NC mean size were produced by changing the deposition parameters, without post-growth annealing. The electrical conductivity of the films, measured as function of temperature, is discussed in relation to their nanostructure