Power p-i-n diode modeling using SPICE

• Autor(es): Armando Araújo ; Adriano Carvalho ; Jorge Martins de Carvalho
• Data: 1997
• Identificador Persistente: http://hdl.handle.net/10216/586
• Origem: Repositório Aberto da Universidade do Porto
• Assunto(s): Ciências tecnológicas; Engenharia; Engenharia electrotécnica
• Tipo de Documento: Documento de conferência
• Idioma: Português

Descrição

A physics based model for the power p-i-n diode is implemented into the general circuit simulation package SPICE. This model, based on a variational formulation and finite element solution of the semiconductor equations, accurately describes the forward and reverse recovery, as well as, the conduction behavior. The procedure used to implement the resulting model into SPICE is described. The simulations are finally compared with known experiments for demonstration of its effectiveness. A physics based model for the power p-i-n diode is implemented into the general circuit simulation package SPICE. This model, based on a variational formulation and finite element solution of the semiconductor equations, accurately describes the forward and reverse recovery, as well as, the conduction behavior. The procedure used to implement the resulting model into SPICE is described. The simulations are finally compared with known experiments for demonstration of its effectiveness.