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Towards the development of intelligent transportation systems

A method for bipolar semiconductor device modeling implementable in circuit sim...

This paper presents a method for modeling power semiconductor devices based on the unidimensional solution of the diffusion equation describing the behavior of charge in low doped zones. The method uses a variational approach, and the finite elements method, which allows to transform a partial differential equation in space and time into a finite set of differential equations in time only. As the used functiona...

A modular approach for modelling and simulation of semiconductor power devices

This paper presents a modular approach for the modeling and simulation of power semiconductor devices. The novelty of the method is the accurate description of the carrier distribution in the low doped zone using a modular circuit network. This is achieved through the variational reformulation of the ambipolar diffusion equation (ADE) with posterior approximate solution with a finite element approach. The obtai...

Power p-i-n diode modeling using SPICE

A physics based model for the power p-i-n diode is implemented into the general circuit simulation package SPICE. This model, based on a variational formulation and finite element solution of the semiconductor equations, accurately describes the forward and reverse recovery, as well as, the conduction behavior. The procedure used to implement the resulting model into SPICE is described. The simu...

A New Method for Solving the Ambipolar Diffusion Equation (ADE) Based on a Fini...

This paper presents a new method for simulation of power bipolar devices. The method is based on the solution of the Ambipolar Diffusion Equation (ADE) with a finite element (FE) approach. This one allows analog solutions for ADE through an equivalent electrical network. So the method could constitute the core for power bipolar devices simulation into any electrical circuit simulator. ; This pa...