A variational ADE (ambipolar diffusion equation) formulation and its finite ele...

• Author(s): Armando Luís Sousa Araújo ; Adriano da Silva Carvalho
• Date: 2004
• Persistent ID: http://hdl.handle.net/10216/165
• Origin: Repositório Aberto da Universidade do Porto
• Subject(s): Ciências tecnológicas; Engenharia; Engenharia electrotécnica
• Document Type: Conference Object
• Language: English

Description

This paper presents a variational formulation of the Ambipolar Diffusion Equation (ADE) and a finite element (FE) method approach to its solution. The method allows solutions for ADE through equivalent electrical networks. So it will be simple to teach the dynamics associated with low doped zones, presented in any bipolar semiconductor, such as power diodes, thyristors, bjts and igbts, as well as, its static and commutation characteristics. In fact the only tool needed will be an electrical circuit simulator such as SPICE