Admittance spectroscopy of Cu2ZnSnS4 based thin film solar cells

• Author(s): Fernandes, P. A. ; Sartori, A. F. ; Salomé, P. M. P. ; Malaquias, J. ; Cunha, A. F. da ; Graça, M. P. F. ; González, J. C.
• Date: 2012
• Persistent ID: http://hdl.handle.net/10400.22/3383
• Origin: Repositório Científico do Instituto Politécnico do Porto
• Document Type: Article
• Language: English

Description

In this report, we propose an AC response equivalent circuit model to describe the admittance measurements of Cu2ZnSnS4 thin film solar cell grown by sulphurization of stacked metallic precursors. This circuit describes the contact resistances, the back contact, and the heterojunction with two trap levels. The study of the back contact resistance allowed the estimation of a back contact barrier of 246 meV. The analysis of the trap series with varying temperature revealed defect activation energies of 45 meV and 113 meV. The solar cell’s electrical parameters were obtained from the J-V curve: conversion efficiency, 1.21%; fill factor, 50%; open circuit voltage, 360 mV; and short circuit current density, 6.8 mA/cm2.