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Admittance spectroscopy of Cu2ZnSnS4 based thin film solar cells
Fernandes, P. A.; Sartori, A. F.; Salomé, P. M. P.; Malaquias, J.; Cunha, A. F. da; Graça, M. P. F.; González, J. C.In this report, we propose an AC response equivalent circuit model to describe the admittance measurements of Cu2ZnSnS4 thin film solar cell grown by sulphurization of stacked metallic precursors. This circuit describes the contact resistances, the back contact, and the heterojunction with two trap levels. The study of the back contact resistance allowed the estimation of a back contact barrier of 246 meV. The ...
Growth and characterization of Cu2ZnSn(S,Se)4 thin films for solar cells
Salomé, P. M. P.; Malaquias, J.; Fernandes, P. A.; Ferreira, M. S.; Cunha, A. F. da; Leitão, J. P.; González, J. C.; Matinaga, F. M.Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) with their band gap energies around 1.45 eV and 1.0 eV, respectively, can be used as the absorber layer in thin film solar cells. By using a mixture of both compounds, Cu2ZnSn(S,Se)4 (CZTSSe), a band gap tuning may be possible. The latter material has already shown promising results such as solar cell efficiencies up to 10.1%. In this work, CZTSSe thin films were grown in...
Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-b...
Leitão, J. P.; Santos, N. M.; Fernandes, P. A.; Salomé, P. M. P.; Cunha, A. F. da; González, J. C.; Ribeiro, G. M.; Matinaga, F. M.In this work, we investigated structural, morphological, electrical, and optical properties from a set of Cu2ZnSnS4 thin films grown by sulfurization of metallic precursors deposited on soda lime glass substrates coated with or without molybdenum. X-ray diffraction and Raman spectroscopy measurements revealed the formation of single-phase Cu2ZnSnS4 thin films. A good crystallinity and grain compactness of the f...
Study of optical and structural properties of Cu2ZnSnS4 thin films
Leitão, J. P.; Santos, N. M.; Fernandes, P. A.; Salomé, P. M. P.; Cunha, A. F. da; González, J. C.; Matinaga, F. M.Cu2ZnSnS4 is a promising semiconductor to be used as absorber in thin film solar cells. In this work, we investigated optical and structural properties of Cu2ZnSnS4 thin films grown by sulphurization of metallic precursors deposited on soda lime glass substrates. The crystalline phases were studied by X-ray diffraction measurements showing the presence of only the Cu2ZnSnS4 phase. The studied films were copper ...
Growth pressure dependence of Cu2ZnSnSe4 properties
Salomé, P. M. P.; Fernandes, P. A.; Cunha, A. F. da; Leitão, J. P.; Malaquias, J.; Weber, A.; González, J. C.; Silva, M. I. N. daIn this work, we show a set of growth conditions, for the two step process, with which the growth of CZTSe is successful and reproducible. The properties of the best CTZSe thin films grown by this method were examined by SEM/EDS, XRD, Raman scattering, AFM/EFM, transmittance and reflectance measurements, photoluminescence (PL) measurements and hot point probe. A broad emission band was observed in the photolumi...
SXS and XPS study of the adsorption and desorption of Te on GaAs (100)
González,J.C.; Rodrigues,W.N.; Silva,C.M.; Moreira,M.V.B.; Oliveira,A.G. de; Abbate,M.; Vicentin,F.C.The adsorption and desorption of Te on GaAs (100) has been investigated using Soft X-ray Spectroscopy (SXS) and X-ray Photoelectron Spectroscopy (XPS). The SXS measurements have been done at the Brazilian synchrotron facility LNLS, and the XPS study was performed using laboratory sources. The samples were MBE GaAs (100) layers covered in-situ by Te from an effusion cell. Two families of samples were studied: sa...
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