Detalhes do Documento

Oxide muonics: A new compendium

Autor(es): Cox, S. F. J. cv logo 1 ; Lord, J. S. cv logo 2 ; Cottrell, S. P. cv logo 3 ; Gil, J. M. cv logo 4 ; Alberto, H. V. cv logo 5 ; Piroto Duarte, J. cv logo 6 ; Vilão, R. C. cv logo 7 ; Keeble, D. J. cv logo 8 ; Davis, E. A. cv logo 9 ; Keren, A. cv logo 10 ; Scheuermann, R. cv logo 11 ; Stoykov, A. cv logo 12 ; Charlton, M. cv logo 13 ; van der Werf, D. P. cv logo 14 ; Gavartin, J. cv logo 15

Data: 2006

Identificador Persistente: http://hdl.handle.net/10316/4408

Origem: Estudo Geral - Universidade de Coimbra

Assunto(s): Muonium; Hydrogen doping


Descrição
A new survey of muonium states brings the total of binary non-magnetic oxides studied to 30, with normal muonium--the interstitially trapped atomic state--found in 15 of these. The number of shallow-donor states of the type known in ZnO now also totals 15, but there are hints of several others. Tantalizingly, the shallow-donor and deep-atomic states are found to coexist in several of the candidate high-permittivity dielectrics. Highly anisotropic states, resembling anomalous muonium in semiconductors and including examples of muonium trapped at oxygen vacancies, complete a spectrum of hyperfine parameters covering five powers of ten. Effective ionization temperatures range from 10 K for shallow to over 1000 K for deep states, with corresponding activation energies between several meV and several eV. The oxide band gap emerges as a parameter controlling the systematics of the deep-to-shallow transition for muonium and, by inference, monatomic hydrogen. http://www.sciencedirect.com/science/article/B6TVH-4HYV078-K/1/89f7584f76f4b62f6fa92e3c5a7d121b
Tipo de Documento Artigo
Idioma Inglês
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