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Muon diffusion and trapping in chalcopyrite semiconductors

Vilão, R. C.; Gil, J. M.; Alberto, H. V.; Duarte, J. Piroto; Campos, N. Ayres de; Weidinger, A.; Yakushev, M. V.; Cox, S. F. J.

The diffusion parameters of diamagnetic muons in chalcopyrites CuInSe2, CuInS2, CuInTe2, CuGaTe2 and (Ag0.25Cu0.75)InSe2 were obtained by [mu]SR methods. The variations among the different compositions were found to validate the anion-antibonding localization model. The application of a two-state model to the zero-field data revealed muon trapping by defects. The dipolar width at the trap and the number of jump...


High-temperature trapping of muons in CuInSe2 and CuInS2

Gil, J. M.; Alberto, H. V.; Vilão, R. C.; Duarte, J. Piroto; Mendes, P. J.; Campos, N. Ayres de; Weidinger, A.; Niedermayer, Ch.; Yakushev, M. V.

Zero-field [mu]SR measurements were performed at the EMU muon beamline of the ISIS facility on single crystals of p- and n-type CuInSe2 and on crystallites of p-type CuInS2.The diamagnetic centre, thought to be located in all these compounds at the Se anti-bonding interstitial site at low temperatures, is seen to diffuse above 200 K in the Se compound and above 250 K in the S compound. At 380 K the muons are ag...


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