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Gate-bias stress in amorphous oxide semiconductors thin-film transistors
Lopes, M. E.; Gomes, Henrique L.; Medeiros, M. C. R.; Barquinha, P.; Pereira, L. M. C.; Fortunato, E.; Martins, R.; Ferreira, I.A quantitative study of the dynamics of threshold-voltage shifts with time in gallium-indium zinc oxide amorphous thin-film transistors is presented using standard analysis based on the stretched exponential relaxation. For devices using thermal silicon oxide as gate dielectric, the relaxation time is 3 105 s at room temperature with activation energy of 0.68 eV. These transistors approach the stability of the ...
Magnetic and transport properties of diluted granular multilayers
Silva, H. G.; Gomes, Henrique L.; Pogorelov, Y. G.; Pereira, L. M. C.; Kakazei, G. N.; Sousa, J. B.; Araújo, J. P.; Mariano, J. F. L.; Cardoso, S.The magnetic and transport properties of Co80Fe20t /Al2O34 nm multilayers with low nominal thicknesses t=0.7 and 0.9 nm of Co80Fe20 granular layers are studied. Magnetic studies find a superparamagnetic state above the blocking temperature Tb of field-cooled/zero-field-cooled splitting that grows with t and decreases with H. The low-voltage Ohmic tunnel transport passes to non-Ohmic IV3/2 law for applied fields...
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