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Optical doping of nitrides by ion implantation
Alves, E.; Lorenz, K.; Vianden, R.; Boemare, C.; Soares, M.J.; Monteiro, T.A series of rare earth elements (RE) were implanted in GaN epilayers to study the lattice site location and optical activity. Rutherford backscattering spectrometry in the channeling mode(RBS/C) was used to follow the damage behavior in the Ga sublattice and the site location of the RE. For all the implanted elements (Ce, Pr, Dy, Er, and Lu) the results indicate the complete substitutionality on Ga sites after ...
Data: 2001
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Origem: RIA - Repositório Institucional da Universidade de Aveiro
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