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AlNxOy thin films for electrical applications
Borges, Joel; Arvinte, R.; Sousa, R. E.; Vaz, F.; Marques, L.Comunicação oral ; Aluminium oxide (Al2O3) is an insulator material, with high electrical breakdown, large band gap and high permittivity. Its dielectric properties make it a promising candidate to be used as gate material instead of SiO2 in microelectronic applications, such as in flash memory circuits, organic thin film transistors (OTFT) and MOSFETs. On the other hand, aluminium nitride (AlN) is a ceramic p...
Preparation and characterization of CrN Oy thin films : the effect of compos...
Arvinte, R.; Borges, Joel; Sousa, R. E.; Munteanu, Florentina-Daniela; Barradas, N. P.; Alves, E.; Vaz, F.; Marques, L.Metallic oxynitrides have attracted the attention of several researchers in the last decade due to their versatile properties. Through the addition of a small amount of oxygen into a transition metal nitride film, the material’s bonding states between ionic and covalent types can be tailored, thus opening a wide range of electrical, optical, mechanical and tribological responses. Among the o...
Desenvolvimento de biopesticida a base de Beauveria bassiana para controle de M...
MICHEREFF FILHO, M.; FARIA, M. R.; OLIVEIRA, S. O. D.; SOUSA, R. E. T.; ALLAN, T. D.; BARON, E. B.; OLIVEIRA, M. W. M.; GUIMARÃES, J. A.; LIZ, R. S. de2009
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