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Compositional dependence of the strain-free optical band gap in InxGa1 - xN layers
Pereira, S.; Correia, M.R.; Monteiro, T.; Pereira, E.; Alves, E.; Sequeira, A.D.; Franco, N.The effect of strain on the compositional and optical properties of a set of epitaxial single layers of InxGa12xN was studied. Indium content was measured free from the effects of strain by Rutherford backscattering spectrometry. Accurate knowledge of the In mole fraction, combined with x-ray diffraction measurements, allows perpendicular strain (e zz) to be evaluated. Optical band gaps were determined by absor...
Data: 2001
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Origem: RIA - Repositório Institucional da Universidade de Aveiro
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