This paper discusses bandwidth problems associated with second-generation current conveyors (CCII). In particular, our work is centered in high-capacitance applications, and has been oriented for wireless optical links and applied physics. We discuss techniques for improving bandwidth in these CCIIs, and develop a new CCII structure with larger bandwidth than traditional circuits. These circuits are then compar...
The recovery of metal ions by electrodeposition from solutions resulting from the lixiviation of spent Zn-MnO2 batteries was studied. It was attempted to optimise the electrodeposition process, the selectivity of ion-separation, the morphologic characteristics, and the anticorrosive and galvanic properties of metallic deposits. The simultaneous deposition of zinc and manganese on different ferrous substrates un...
This review examines the reasons for increasing interest towards electrolyses by the chemical industry, reviews the electrochemical industries as most of them now exist, and provides a status report on the key technological advances which are occurring to meet present and future needs. Classical industries like those of chloroalkali, aluminium, p-aminophenol, adiponitrile, ethylene glycol, anthraquinone, perflu...
Determinou-se a ocorrência de Staphylococcus aureus, Salmonella spp. e de microrganismos indicadores de contaminação fecal em queijos-coalho comercializados em 15 pontos de venda do Mercado Central de Aracaju, SE, durante quatro meses. Dezesseis amostras (26,7%) foram positivas para Salmonella spp. e 28 (46,7%) positivas para estafilococos coagulase positiva. Quanto à contaminação por coliformes totais, 56 (93,...
The electrical properties of p-type layers of indium phosphide (InP), formed by the diffusion of zinc into n-type material, are studied by Hall Effect measurements. A wide range of diffusion conditions are used and both homogeneously doped specimens and those containing a zinc atom concentration gradient are produced. A non-correspondence of atom and carrier concentrations is indicated, confirming previous four...
The diffusion of zinc into n-type InP has been studied by four-point probe electrical measurements on homogeneously doped crystals at 750 ºC. The zinc carrier concentration in the diffused layer was approximately 3 x 10(18) cm-3 and its mobility was assumed to be about 40 cm² V-1 s-1. It was observed that the concentration of free carriers throughout the entire diffused region is always less than the number of ...
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