The present work reports on the fabrication and characterization of a planar Peltier cooler on a flexible substrate. The device was fabricated on a 12 νm thick Kapton(c) polyimide substrate using Bi2Te3 and Sb2Te3 thermoelectric elements deposited by thermal co-evaporation. The cold area of the device is cooled with four thermoelectric junctions, connected in series using metal contacts. Plastic substrates add ...
The deposition and characterization of n-type Bi2Te3 and p-type Sb2Te3 semiconductor films are reported. The films were deposited by thermal co-evaporation on a 25 µm thick polyimide (kapton) substrate. The co-evaporation method is inexpensive, simple, and reliable, when compared to other techniques that need longer time periods to prepare the starting material or require more complicated and expensive depositi...
The fabrication of thermopiles suitable for thermoelectric cooling and energy generation using Bi2Te3 and Sb2Te3 as n- and p-type layers, respectively, is reported. The thin-film thermoelectric material deposition process, thin-film electronic characterization and device simulation is addressed. The thermoelectric thin-films were deposited by co-evaporation of Bi and Te, for the n-type element and Sb and Te, fo...
The present work reports the fabrication and characterization of a planar Peltier microcooler on a flexible substrate. The microcooler was fabricated on flexible Kapton© polyimide substrate, 12 µm in thickness, using Bi2Te3 and Sb2Te3 thermoelectric elements deposited by thermal co-evaporation. The cold area of the device is cooled using four pairs of thermoelectric elements, connected in series with aluminum/n...
The present work reports on the fabrication and characterization of the first planar Peltier microcooler on a flexible substrate. The microcooler was fabricated on flexible Kapton© polyimide substrate, 25 μm in thickness, using Bi2Te3 and Sb2Te3 thermoelectric elements, and was deposited by thermal co-evaporation.
The optimization of the thermal co-evaporation process for ntype Bismuth Telluride and p-type Antimony Telluride onto plastic substrates (Kapton© polyimide) for thermoelectric applications is reported.
This presentation reports the deposition and characterization of n-type Bi2Te3 and p-type Sb2Te3 semiconductor films by thermal co-evaporation method. Power factors of 4.6×10-3 Wm-1K-2 and 1.3×10-3 Wm-1K-2, were measured at room temperature on n-type and p-type films, respectively.
The optimization of the deposition process for n-type Bi2Te3 and p-type Sb2Te3 semiconductor thin films for thermoelectric applications is reported. The films were deposited on a 25 μm thick flexible polyimide (Kapton) substrate by co-evaporation of Bi and Te, for the n-type element, and Sb and Te, for the p-type element.
The fabrication (using planar thin-film technology) of Bi2Te3 and Sb2Te3 microstructures, with high thermoelectric figure of merit, suitable for incorporation in Peltier elements and thermopiles, is reported. The microstructures were fabricated by co-evaporation of Bi and Te, for the n-type element, and Sb and Te, for the p-type element, on a 25 µm-thick polyimide (kapton) substrate. Kapton film is a flexible, ...
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