This paper reports on the preparation of TiNx thin films by d.c. reactive magnetron sputtering. The coating thickness ranged from 1.7 to 4.2 Am and the nitrogen content varied between 0 and 55 at.%. X-Ray diffraction showed the development of the hexagonal a-Ti phase, with strong [002] orientation for low nitrogen contents, where the N atoms fit into octahedral sites in the Ti lattice as the amount of nitrogen ...
Si C N thin films were deposited by reactive magnetron sputtering on glass and steel substrates. The films were grown in a x y z rotation mode over a carbon and a silicon targets in a mixed Ar/N2 atmosphere at a substrate temperature of 300 °C. The 2 substrates were held grounded or at a negative bias of -25 and -50 V. The film characteristics were also controlled by nitrogen flow. Binary and ternary films were...
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