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Influence of nitrogen content on the structural, mechanical and electrical prop...

Vaz, F.; Ferreira, J. A.; Ribeiro, E.; Rebouta, L.; Lanceros-Méndez, S.; Mendes, J.; Alves, E.; Goudeau, Ph.; Rivière, J. P.; Ribeiro, António Fernando

This paper reports on the preparation of TiNx thin films by d.c. reactive magnetron sputtering. The coating thickness ranged from 1.7 to 4.2 Am and the nitrogen content varied between 0 and 55 at.%. X-Ray diffraction showed the development of the hexagonal a-Ti phase, with strong [002] orientation for low nitrogen contents, where the N atoms fit into octahedral sites in the Ti lattice as the amount of nitrogen ...


Effect of nitrogen gas flow on amorphous Si–C–N films produced by PVD techniques

Moura, C.; Cunha, L.; Orfão, H.; Pischow, K.; De Rijk, J.; Rybinski, M.; Mrzyk, D.

Si C N thin films were deposited by reactive magnetron sputtering on glass and steel substrates. The films were grown in a x y z rotation mode over a carbon and a silicon targets in a mixed Ar/N2 atmosphere at a substrate temperature of 300 °C. The 2 substrates were held grounded or at a negative bias of -25 and -50 V. The film characteristics were also controlled by nitrogen flow. Binary and ternary films were...


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