The evolution of the nanoscale structure and the chemical bonds formed in Ti–C–N–O films grown by reactive sputtering were studied as a function of the composition of the reactive atmosphere by increasing the partial pressure of an O2+N2 gas mixture from 0 up to 0.4 Pa, while that of acetylene (carbon source) was constant. The amorphisation of the films observed by transmission electron microscopy was confirmed...
Accepted manuscript ; Direct current reactive magnetron sputtering was implemented to successfully deposit dark Ti(C,O,N) thin films on silicon substrates. A titanium target was sputtered while a mixture of oxygen and nitrogen was injected into the deposition chamber, independently from an acetylene source. The deposition parameters were chosen as a function of pre-existing knowledge about sputtered Ti–O–N and...
TiCxOy films with various O/Ti ratios have been deposited by DC magnetron sputtering, using C pieces incrusted in a Ti target erosion area. Composition analysis revealed the existence of three different growth regimes: (i) zone I, corresponding to films with metallic-like appearance, and atomic ratios O/Ti below one; (ii) zone II, with films revealing interference-like colours, and atomic ratios O/Ti higher tha...
For the first time, Zr-Ge-N films were deposited on silicon and steel substrates by sputtering a Zr-Ge composite target in reactive Ar-N2 mixture. The films were characterised by electron probe microanalysis, X-ray diffraction, micro-Raman spectroscopy and depth-sensing indentation. The effects of the Ge content and substrate bias voltage on the films' structure, internal stress, hardness and oxidation resistan...
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