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Study of the piezoresistivity of doped nanocrystalline silicon thin films
Gaspar, J.; Gieschke, P.; Ehling, C.; Kistner, J.; Gonçalves, N. J.; Vasilevskiy, Mikhail; Paul, O.; Alpuim, P.The piezoresistive response of n- and p-type hydrogenated nanocrystalline silicon thin films, deposited by hot-wire (HW) and plasma-enhanced chemical vapor deposition (PECVD) on thermally oxidized silicon wafers, has been studied using four-point bending tests. The piezoresistive gauge factor (GF) was measured on patterned thin-film micro-resistors rotated by an angle θ with respect to the principal strain axis...
Data: 2011
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Origem: RepositóriUM - Universidade do Minho
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