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Questionário de incapacidade de Roland Morris: adaptação e validação para a pop...

Monteiro, J.; Faísca, Luís; Nunes, O.; Hipólito, João

O objectivo do presente estudo foi adaptar e validar para a língua portuguesa o Roland Morris Disability Questionnaire (RMDQ) por não existirem escalas em Português Euro- peu para avaliar o grau de incapacidade dos doentes com lombalgias. Após os procedi- mentos de tradução e retroversão, a versão portuguesa do RMDQ foi testada em 112 doentes com lombalgias (30 homens e 82 mulheres), a fim de analisar as suas c...


Effect of non-abrupt doping and interfacial profiles on the carrier sheet densi...

Enders,B. G.; Lima,F. M. S.; Fonseca,A. L. A.; Nunes,O. A. C.; Silva Jr,E. F. da

The results of an accurate theoretical study on the effects of non-abrupt doping and interfacial profiles on the electron sheet density in one-side modulation-doped wurtzite GaN/AlGaN single quantum wells at low temperatures are presented. We solve coupled Schrödinger and Poisson equations self-consistently via the finite difference method. By employing a proper discretization on a nonuniform grid and taking in...

Data: 2009   |   Origem: OASIS br

Effect of non-abrupt doping and interfacial profiles on the carrier sheet densi...

Enders Neto, Bernhard Georg; Lima, Fábio Menezes de Souza; Fonseca, Antonio Luciano de Almeida; Nunes, O. A. C.; Silva Júnior, Eronides Felisberto da

The results of an accurate theoretical study on the effects of non-abrupt doping and interfacial profiles on the electron sheet density in one-side modulation-doped wurtzite GaN/AlGaN single quantum wells at low temperatures are presented. We solve coupled Schr¨odinger and Poisson equations self-consistently via the finite difference method. By employing a proper discretization on a nonuniform grid and taking i...

Data: 2009   |   Origem: OASIS br

Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum ...

Lima,F. M. S.; Veloso,A. B.; Fonseca,A. L. A.; Nunes,O. A. C.

The low-temperature electron mobility is investigated here for electrons confined in modulation-doped In0.53Ga0.47As/InP single symmetric quantum wells. The subband structure calculation is developed via variational method, both Schrödinger and Poisson equations being solved simultaneously with adequate heterointerface matching conditions. With this in hands, the main electron scattering rates are computed, nam...

Data: 2006   |   Origem: OASIS br

Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum ...

Lima, Fábio Menezes de Souza; Veloso, Aline Bessa; Fonseca, Antonio Luciano de Almeida; Nunes, O. A. C.

The low-temperature electron mobility is investigated here for electrons confined in modulation-doped In0:53Ga0:47As/InP single symmetric quantum wells. The subband structure calculation is developed via variational method, both Schr¨odinger and Poisson equations being solved simultaneously with adequate heterointerface matching conditions. With this in hands, the main electron scattering rates are computed, na...

Data: 2006   |   Origem: OASIS br

Candidemia in Acute Leukemia Patients

Ribeiro, P; Sousa, AB; Aveiro, F; Nunes, O; Fernandes, JP; Gouveia, J

Fungal infections are an important cause of morbidity and mortality in patients with acute leukemia (AL). Candidemia, once rare, is now a common nosocomial infection because of the intensity of chemotherapy, prolonged neutropenia, administration of broad-spectrum antibiotics and use of central venous catheters (CVC). We retrospectively identified patients treated for AL from 6/86 to 6/95 who also had candidemia...


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    Financiadores do RCAAP

Fundação para a Ciência e a Tecnologia Universidade do Minho   Governo Português Ministério da Educação e Ciência Programa Operacional da Sociedade do Conhecimento União Europeia