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The role of composition, structure and morphology on the electrical, optical an...
Borges, Joel; Martin, N.; Barradas, N. P.; Alves, E.; Eyidi, D.; Girardeau, T.; Fonseca, C.; Vaz, F.; Marques, L.Metallic (Me) oxynitrides (MeNxOy) are an attractive class of materials due to a unique set of versatile properties in different technological domains such as protective applications (wear, diffusion and corrosion-resistance), decorative coatings, gas barriers, microelectronics, optoelectronics, solar cells, etc. Among the group of oxynitrides, aluminium oxynitride (AlNxOy) presents some interesting characteris...
Electrical properties of AlNxOy thin films prepared by reactive magnetron sputt...
Borges, Joel; Martin, N.; Barradas, Nuno P.; Alves, E.; Eyidi, D.; Beaufort, Marie France; Riviere, J. P.; Vaz, F.; Marques, L.Direct current magnetron sputtering was used to produce AlNxOy thin films, using an aluminum target, argon and a mixture of N2+O2 (17:3) as reactive gases. The partial pressure of the reactive gas mixture was increased, maintaining the discharge current constant. Within the two identified regimes of the target (metallic and compound), four different tendencies for the deposition rate were found and a morphologi...
Electrical and optical properties of AlNxOy thin films prepared by reactive DC ...
Borges, Joel; Martin, N.; Alves, E.; Barradas, N. P.; Vaz, F.; Marques, L.Resumo e comunicação oral ; The addition of oxygen and nitrogen to a growing Al film can give rise to an oxynitride (AlNxOy) film with a wide range of different properties, that can be tailored between those of the pure Al and those of AlNx and AlOy, In this work, a set of films of AlNxOy and two sets of the binary systems, AlNx and AlOy, were produced using reactive DC magnetron sputtering. The discharge char...
Electrical properties of AlNxOy deposited by DC magnetron sputtering
Borges, Joel; Arvinte, R.; Ramos, Marta M. D.; Martin, N.; Vaz, F.; Marques, L.Apresentação em poster ; Al2O3 is an insulator material, with high electrical breakdown and large band gap. Its dielectric properties make it a candidate to be used as gate material instead of SiO2 in microelectronic applications, such as in flash memory circuits. On the other hand, AlN is a ceramic piezoelectric material with high electrical resistivity and excellent thermal properties, which has been used in...
Electrical properties of AlNxOy thin films deposited by DC magnetron sputtering
Borges, Joel; Arvinte, R.; Martin, N.; Vaz, F.; Marques, L.Apresentação em poster ; Al2O3 is an insulator material, with high electrical breakdown and large band gap. Its dielectric properties make it a candidate to be used as gate material instead of SiO2 in microelectronic applications, such as in flash memory circuits. On the other hand, AlN is a ceramic piezoelectric material with high electrical resistivity and excellent thermal properties, which has been used in...
Genetic Variability in CLU and Its Association with Alzheimer's Disease
Guerreiro, Rita J.; Beck, John; Gibbs, J. Raphael; Santana, Isabel; Rossor, Martin N.; Schott, Jonathan M.; Nalls, Michael A.; Ribeiro, HelenaRecently, two large genome wide association studies in Alzheimer disease (AD) have identified variants in three different genes (CLU, PICALM and CR1) as being associated with the risk of developing AD. The strongest association was reported for an intronic single nucleotide polymorphism (SNP) in CLU. To further characterize this association we have sequenced the coding region of this gene in a total of 495 A...
ZrOxNy decorative thin films prepared by the reactive gas pulsing process
Carvalho, P.; Cunha, L.; Alves, E.; Martin, N.; Le Bourhis, E.; Vaz, F.Zirconium oxynitride thin films were deposited by dc reactive magnetron sputtering. A zirconium metallic target was sputtered in an Ar + N2 + O2 atmosphere. Argon and nitrogen flow rates were maintained constant whereas oxygen was pulsed during the deposition, implementing the reactive gas pulsing process (RGPP). A constant pulsing period T = 3 s was used following an exponential periodic signal versus time. Th...
TiN-based decorative coatings : colour change by addition of C and O
Chappé, J. M.; Fernandes, Ana C.; Cunha, L.; Moura, C.; Vaz, F.; Martin, N.; Munteanu, D.; Borcea, B.As a result of technological progress in recent years, a new challenge was passed onto decorative hard coatings. While enhancing the appearance and lending attractive coloration to surfaces, the films are supposed to provide scratch resistance, protection against corrosion and durability. For this work, TiN(O) and TiN(C,O) thin films were prepared. Within the TiN(O) system, film colours varied from the glossy g...
Property change in multifunctional TiCxOy thin films: Effect of the O/Ti ratio
Fernandes, A. C.; Carvalho, P.; Vaz, F.; Lanceros-Méndez, S.; Machado, A. V.; Parreira, N. M. G.; Pierson, J. F.; Martin, N.TiCxOy films with various O/Ti ratios have been deposited by DC magnetron sputtering, using C pieces incrusted in a Ti target erosion area. Composition analysis revealed the existence of three different growth regimes: (i) zone I, corresponding to films with metallic-like appearance, and atomic ratios O/Ti below one; (ii) zone II, with films revealing interference-like colours, and atomic ratios O/Ti higher tha...
Hermann Gottlieb Dohms: um perfil biográfico
Dreher,Martin N.O artigo verifica a inserção de comunidades de descendentes de alemães luteranos no Rio Grande do Sul, entre os fins do século XIX e o Estado Novo, valendo-se do perfil biográfico de Hermann Gottlieb Dohms, filho de imigrantes radicados no interior gaúcho. Após estudos teológicos na Europa, retornou ao Rio Grande do Sul, onde exerceu importante ação teológica, educacional e política. Na primeira metade do sécul...
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