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High-rate deposition of nano-crystalline silicon thin films on plastics
Marins, Emílio Sérgio; Guduru, Virendra; Ribeiro, Miguel; Cerqueira, M. F.; Bouattour, Ali; Alpuim, P.Nanocrystalline silicon (nc-Si:H) is commonly used in the bottom cell of tandem solar cells. With an indirect bandgap, nc-Si:H requires thicker (∼1 µm) films for efficient light harvesting than amorphous Si (a-Si:H) does. Therefore, thin-film high deposition rates are crucial for further cost reduction of highly efficient a–Si:H based photovoltaic technology. Plastic substrates allow for further cost reduction ...
Piezoresistive silicon thin film sensor array for biomedical applications
Alpuim, P.; Correia, Vítor; Marins, Emílio Sérgio; Rocha, J. G.; Trindade, Isabel; Lanceros-Méndez, S.N-type hydrogenated nanocrystalline silicon thin film piezoresistors, with gauge factor −28, were deposited on rugged and flexible polyimide foils by Hot-wire chemical vapor deposition using a tantalum filament heated to 1750 °C. The piezoresistive response under cyclic quasi-static and dynamical (up to 100 Hz) load conditions is reported. Test structures, consisting of microresistors having lateral dimensions ...
Deposition of silicon nitride thin films by hot-wire CVD at 100ºC and 250ºC
Alpuim, P.; Gonçalves, L. M.; Marins, Emílio Sérgio; Viseu, T. M. R.; Ferdov, S.; Bourée, J. E.Silicon nitride thin films for use as passivation layers in solar cells and organic electronics or as gate dielectrics in thin-film transistors were deposited by the Hot-wire chemical vapor deposition technique at a high deposition rate (1-3 Ǻ/s) and at low substrate temperature. Films were deposited using NH3/SiH4 flow rate ratios between 1 and 70 and substrate temperatures of 100º C and 250ºC. For NH3/SiH4 ra...
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