A d.c. reactive magnetron sputtering technique was used to deposit (Ti, Si, Al)N films. The ion current density in the substrate was varied by the superimposition of an axially symmetric external magnetic field between the substrate and target. It was found that the variation of the magnetic field strength induced changes in the ion current density in the substrate with a consequent change in film properties. X...
A d.c. reactive magnetron sputtering technique was used to deposit (Ti, Si, Al)N films. The ion current density in the substrate was varied by the" superimposition of an axially symmetric external magnetic field between the substrate and target. It was found that the variation of the magnetic field strength induced changes in the ion c~ent density in the substiate with a consequent c:hange in film properties. X...
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